53012 tkim tc-00002767/41006qa msim tb-00002239 no. a0324-1/7 http://onsemi.com semiconductor components industries, llc, 2013 july, 2013 2sk4065 n-channel power mosfet 75v, 100a, 6m , to-263-2l stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. features ? on-resistance r ds (on)1=4.6m (typ.) ? input capacitance ciss=12200pf (typ.) ? 4v drive speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 75 v gate-to-source voltage v gss 20 v drain current (dc) i d 100 a drain current (pulse) i dp pw 10 s, duty cycle 1% 400 a allowable power dissipation p d 1.65 w tc=25c 90 w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *1 e as 735 mj avalanche current *2 i av 70 a note : * 1 v dd =30v, l=200 h, i av =70a (fig.1) * 2 l 200 h, single pulse package dimensions unit : mm (typ) 7535-001 ordering number : ena0324a 1 3 2, 4 k4065 lot no. 1 : gate 2 : drain 3 : source 4 : drain to-263-2l 10.0 5.3 1.27 0.8 2.54 2.54 13.4 9.2 7.9 1.4 1.2 0 to 0.25 2.4 1.75 0.9 3.0 1.35 0.254 4.5 8.0 1.3 0.5 123 4 product & package information ? package : to-263-2l ? jeita, jedec : sc-83, to-263 ? minimum packing quantity : 800 pcs./reel packing type: dl marking electrical connection dl 2SK4065-DL-1E
2sk4065 no. a0324-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 75 v zero-gate voltage drain current i dss v ds =75v, v gs =0v 1 a gate-to-source leakage current i gss v gs =16v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 1.2 2.6 v forward transfer admittance | yfs | v ds =10v, i d =50a 47 78 s static drain-to-source on-state resistance r ds (on)1 i d =50a, v gs =10v 4.6 6.0 m r ds (on)2 i d =50a, v gs =4v 5.7 8.0 m input capacitance ciss v ds =20v, f=1mhz 12200 pf output capacitance coss 950 pf reverse transfer capacitance crss 730 pf turn-on delay time t d (on) see fig.2 80 ns rise time t r 460 ns turn-off delay time t d (off) 930 ns fall time t f 640 ns total gate charge qg v ds =35v, v gs =10v, i d =100a 220 nc gate-to-source charge qgs 40 nc gate-to-drain ?miller? charge qgd 50 nc diode forward voltage v sd i s =100a, v gs =0v 0.9 1.2 v fig.1 avalanche resistance test circuit fig.2 switching time test circuit ordering information device package shipping memo 2SK4065-DL-1E to-263-2l 800pcs./reel pb free 50 10v 0v 50 v dd l 2sk4065 pw=10 s d.c. 1% p. g 50 g s d i d =50a r l =0.7 v dd =35v v out 2sk4065 v in 10v 0v v in
2sk4065 no. a0324-3/7 i d -- v ds i d -- v gs drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a it10698 --25 c 25 c tc=75 c 0.2 0.6 0.4 0.8 1.0 1.2 1.4 2.0 1.6 1.8 0 0 20 40 200 120 100 80 160 140 180 60 it10699 0.5 1.5 2.5 4.5 3.5 1.0 2.0 3.0 4.0 0 0 20 60 40 200 140 120 100 160 180 80 tc=25 c single pulse v gs =3v 10v 6v v ds =10v single pulse 8v 75 c tc= --25 c 25 c r ds (on) -- v gs r ds (on) -- tc i s -- v sd | y fs | -- i d sw time -- i d gate-to-source voltage, v gs -- v case temperature, tc -- c forward transfer admittance, | y fs | -- s static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m drain current, i d -- a drain current, i d -- a switching time, sw time -- ns diode forward voltage, v sd -- v source current, i s -- a it10701 --50 --25 150 it10703 it10702 0.1 1.0 23 57 100 23 57 3 1.0 10 1.4 1.0 0.4 0.2 0.6 1.2 0.8 0 0.01 0.1 5 7 3 2 2 1.0 5 7 3 2 10 5 7 3 2 100 5 7 3 2 3 7 5 2 2 3 100 7 5 2 2 10 357 0 25 50 75 100 125 i d =50a single pulse tc=75 c 25 c --25 c tc= --25 c 25 c 75 c v ds =10v single pulse tc=75 c 25 c --25 c v gs =0v single pulse it10704 0.1 7 1.0 23 5 2 7 10 35 2 100 1000 3 2 3 5 2 5 7 7 t d (off) t d (on) v dd =35v v gs =10v t r it10700 13 24567 10 89 0 0 30 5 15 10 20 25 0 2 14 6 4 10 8 12 t f i d =50a, v gs =4v i d =50a, v gs =10v 7 100 35 single pulse ciss, coss, crss -- v ds drain-to-source voltage, v ds -- v ciss, coss, crss -- pf 030 10 15 20 25 5 1k 3 3 2 it10756 10k 2 3 5 7 7 5 ciss crss f=1mhz coss
2sk4065 no. a0324-4/7 it10881 0.1 1.0 2 3 5 7 2 10 3 5 7 2 0.1 i d =100a 100 s 1ms 10ms 100ms dc operation operation in this area is limited by r ds (on). 1.0 23 57 2 100 23 57 2 10 357 10 s 100 3 5 7 2 1000 3 5 7 a s o drain-to-source voltage, v ds -- v drain current, i d -- a tc=25 c single pulse v gs -- qg total gate charge, qg -- nc gate-to-source voltage, v gs -- v it10705 0 50 200 150 250 100 0 2 4 6 1 3 5 8 7 9 10 v ds =35v i d =100a 0 0 20 40 60 80 100 120 2.0 140 160 1.65 1.5 1.0 0.5 it10707 0 0 25 50 75 100 125 150 100 80 60 20 40 120 175 it10709 0 0 20 40 60 80 100 120 100 140 160 40 60 50 70 80 90 30 20 10 it10708 p d -- ta ambient temperature, ta -- c allowable power dissipation, p d -- w e as -- ta avalanche energy derating factor -- % ambient temperature, ta -- c p d -- tc case temperature, tc -- c allowable power dissipation, p d -- w i dp =400a(pw 10 s)
2sk4065 no. a0324-5/7 taping speci cation 2SK4065-DL-1E
2sk4065 no. a0324-6/7 outline drawing land pattern example 2SK4065-DL-1E mass (g) unit 1.5 * for reference mm unit: mm
2sk4065 ps no. a0324-7/7 note on usage : since the 2sk4065 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner.
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